Beyond Moore’s Law: The Game-Changing Approach Leading to Unprecedented Electronics Versatility

semiconductor technology using mixed-dimensional transistors.


By using transistors with mixed dimensions, a group of researchers at the City University of Hong Kong have developed an entire method for semiconductor technology. This creation clears the path for higher-performance, more effective electronics by overcoming the difficulties associated with conventional downscaling and signalling a substantial advancement towards sophisticated, multipurpose integrated circuits.
The production of semiconductors is facing provocation due to the plateau in the smallness of electronic components, such as transistors. Although, engaging transistors built of mixed-dimensional nanowires and nanoflakes, a group of researchers led by materials science specialists from the City University of Hong Kong (CityUHK) has disclosed an innovative way of producing extremely adaptable and high-performing electronics. This innovation makes designing chip circuits simpler and encourages the creation of adaptable, energy-efficient electronic products in the future.
Fabricating semiconductor devices in an economical and controlled manner has gotten more difficult in recent decades as the continual scaling of transistors and integrated circuits has begun to approach physical constraints. Power dissipation rises with further transistor size scaling due to increased current leakage. Power consumption is also negatively impacted by complex wiring networks.
One encouraging solution to conflict rising power is multivalued logic (MVL). By remarkably lowering the number of transistor elements and their connections, it overcomes the disadvantages of traditional binary logic systems and allows for enhanced information density and reduced power dissipation. A great deal of work has gone into building several kinds of multivalued logic devices, such as anti-am bipolar transistors (AAT).

Novel Development in Anti-Am bipolar Transistors

A type of transistor known as an anti-am bipolar device allows both positive (hole) and negative (electron) carriers of charge to move simultaneously inside the semiconducting channel. Nevertheless, the majority of the materials used in current AAT-based devices are organic or 2D, which makes them unstable for large-scale semiconductor device integration. Furthermore, there hasn’t been much research done on their energy efficiency and frequency characteristics.
A research team led by Professor Johnny Ho, Associate Vice-President (Enterprise) and Associate Head in the Department of Materials Science and Engineering at City UHK, set out to develop anti-am bipolar device-based circuits with fewer interconnections and higher information density, as well as investigate their frequency characteristics, to overcome these limitations.
To produce a novel, mixed-dimensional hetero-transistor that combines the special qualities of superior GaAsSb nanowires and MoS2 nanoflakes, the team developed an innovative chemical vapour-deposition approach.

Innovative Three-Dimensional Transistors

The performance of the new anti-ambipolar transistors was outstanding. Owing to the mixed-dimensional GaAsSb/MoS2 junction’s high interfacial coupling and band-structure alignment features, the hetero-transistor exhibits significant anti-ambipolar transfer characteristics with trans-conductance flipping.
In contrast to a traditional frequency multiplier in CMOS technology, the trans-conductance switching doubles the frequency in response to the input analogue circuit signal, significantly lowering the number of devices needed.
This is the first of its kind in the field of anti-ambipolar transistor applications because our mixed-dimensional, anti-ambipolar transistors can implement multi-valued logic circuits and frequency multipliers simultaneously,” explained Professor Ho.
The multi-valued logic properties lower chip power dissipation and simplify intricate wire networks. High-performance digital and analogue circuits are produced by the device’s decreasing dimensionality and downscaled junction area, which make the device quick and energy-efficient.
According to Professor Ho, “Our results demonstrate that high information storage density and information processing capacity can be designed into chip circuits using mixed-dimensional anti-am bipolar devices.” To maintain Moore’s law, the majority of semiconductor industry researchers to date have concentrated on device miniaturisation. However, the introduction of the anti-am bipolar gadget demonstrates how much better the current binary logic-based technology is in comparison. The technology used in this study is a significant advancement towards the next generation of telecommunications and multifunctional integrated circuits.
To enhance function, the research also makes it possible to further simplify intricate integrated circuit designs. The trans-conductance-flipping characteristic of the mixed-dimensional anti-am bipolar device has demonstrated the potential for a wide range of digital and analogue signal processing applications, such as frequency-doubling circuits, advanced optoelectronics, and ternary logic inverters. According to Professor Ho, The new device structure heralds the potential of a technological revolution in future versatile electronics.


A notable advancement in semiconductor technology has been made by researchers at City University of Hong Kong in the development of mixed-dimensional hetero-transistors. They have developed anti-am bipolar transistors that can implement frequency multipliers and multi-valued logic circuits at the same time by fusing GaAsSb nanowires with MoS2 Nano flakes. This discovery opens the way to more advanced, energy-effective devices while simultaneously addressing the problems with traditional downscaling. This discovery represents a turning point towards unparalleled electronics adaptability, with the possibility for simpler circuit designs and applications in several domains such as optoelectronics and telecommunications.


Q: What is the significance of mixed-dimensional hetero-transistors?

A: GaAsSb nanowires and MoS2 nanoflakes are used in mixed-dimensional hetero-transistors to produce anti-am bipolar transistors that allow frequency multipliers and multi-valued logic circuits to be implemented concurrently. Higher performance and more energy-efficient devices are promised by this invention.GaAsSb nanowires and MoS2 nanoflakes are used in mixed-dimensional hetero-transistors to produce anti-am bipolar transistors that allow frequency multipliers and multi-valued logic circuits to be implemented concurrently. Higher performance and more energy-efficient devices are promised by this invention.

Q: How does this research address challenges in semiconductor technology?

A: By presenting a unique strategy that goes beyond transistor miniaturization constraints, the research tackles issues related to traditional downscaling. The researchers at City University of Hong Kong have unlocked previously unheard-of levels of electronic adaptability by employing mixed-dimensional materials.

Q: What are the potential applications of this technology?

A: Applications for the technology are numerous and include ternary logic inverters, sophisticated optoelectronics, and telecommunications. It also presents chances for more energy efficiency and simpler circuit designs in a range of electronic goods.

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